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Journal of Semiconductors(2010年07期)
半導體學報(英文版)

  • 基本信息
  • 半導體學報(英文版);半導體學報;Chinese Journal of Semiconductors

    中國科學院半導體研究所;中國電子學會

    月刊

  • 1674-4926

    11-5781/TN

    北京市

    英文;

    大16開

    2-184

    1980

  • 出版信息
  • 信息科技

    無線電電子學

    9844篇

  • 1044468次

    41844次

  • 評價信息
  • 1.045

    0.78

  • CA 化學文摘(美)(2024)

    INSPEC 科學文摘(英)(2024)

    JST 日本科學技術(shù)振興機構(gòu)數(shù)據(jù)庫(日)(2024)

    EI 工程索引(美)(2024)

    CSCD 中國科學引文數(shù)據(jù)庫來源期刊(2023-2024年度)

    WJCI 科技期刊世界影響力指數(shù)報告(2023)來源期刊

    1992年(第一版),1996年(第二版),2000年版,2004年版,2008年版

    中科雙效期刊;中國科技期刊卓越行動計劃入選項目;中國最具國際影響力學術(shù)期刊;

目 錄

  • The Bipolar Field-Effect Transistor:Ⅷ.Longitudinal Gradient of Longitudinal Electric Field(Two-MOS-Gates on Pure-Base)
  • Electronic and optical properties of the doped TiO_2 system
  • Size-independent growth of pure zinc blende GaAs nanowires
  • Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes
  • CuPc based organic-inorganic hetero-junction with Au electrodes
  • Monolithic integration of widely tunable sampled grating DBR laser with tilted semiconductor optical amplifier
  • Fabrication of 17×17 polymer/Si arrayed waveguide grating with flat spectral response using steam-redissolution technique
  • A revised approach to Schottky parameter extraction for GaN HEMT
  • Hot carrier effects of SOI NMOS
  • Characteristics of blocking voltage for power 4H-SiC BJTs with mesa edge termination
  • 120-nm gate-length In_(0.7)Ga_(0.3)As/In_(0.52)Al_(0.48)As InP-based HEMT
  • Influence of the external component on the damage of the bipolar transistor induced by the electromagnetic pulse
  • An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor
  • Influence of etching current density on the morphology of macroporous silicon arrays by photo-electrochemical etching
  • An 8 GHz high power AlGaN/GaN HEMT VCO
  • A novel dual-functional MEMS sensor integrating both pressure and temperature units
  • A 6-9 GHz 5-band CMOS synthesizer for MB-OFDM UWB
  • An 18-bit high performance audio ∑-△D/A converter
  • A low-phase-noise digitally controlled crystal oscillator for DVB TV tuners
  • A 2.2-V 2.9-ppm/℃BiCMOS bandgap voltage reference with full temperature-range curvature-compensation
  • A 2.4 GHz high-linearity low-phase-noise CMOS LC-VCO based on capacitance compensation
  • An 8-bit 100-MS/s pipelined ADC without dedicated sample-and-hold amplifier
  • A 2-to-2.4-GHz differentially-tuned fractional-N frequency synthesizer for DVB tuner applications
  • An A/D interface based on ∑△ modulator for thermal vacuum sensor ASICs
  • Low-power switched-capacitor delta-sigma modulator for EEG recording applications
  • Design of an LDO with capacitor multiplier
  • A novel reconfigurable variable gain amplifier for a multi-mode multi-band receiver
  • A dual VCDL DLL based gate driver for zero-voltage-switching DC-DC converter
  • Analysis and design of power efficient semi-passive RFID tag
  • Design of high speed LVDS transceiver ICs
  • Photoelectrochemical etching of uniform macropore array on full 5-inch silicon wafers
  • A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers
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