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Journal of Semiconductors(2010年08期)
半導(dǎo)體學(xué)報(bào)(英文版)
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- 基本信息
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:半導(dǎo)體學(xué)報(bào)(英文版);半導(dǎo)體學(xué)報(bào);Chinese Journal of Semiconductors
:中國科學(xué)院半導(dǎo)體研究所;中國電子學(xué)會
:月刊
- 出版信息
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: 信息科技
: 無線電電子學(xué)
:9844篇
- 評價(jià)信息
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:1.045
:0.78
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目 錄
- First-principles of wurtzite ZnO(0001) and (0001)surface structures
- Young‘s modulus characterization of low-k films of nanoporous Black Diamond~(TM) by surface acoustic waves
- Theoretical study of the SiO_2/Si interface and its effect on energy band profile and MOSFET gate tunneling current
- Theoretical modeling of the interface recombination effect on the performance of Ⅲ-Ⅴtandem solar cells
- Planar nucleation and crystallization in the annealing process of ion implanted silicon
- Photoconductive properties of lead iodide films prepared by electron beam evaporation
- Effect of bath temperature on the properties of CuIn_χGa_(1-χ)Se_2 thin films grown by the electrodeposition technique
- Growth orientation and superconducting properties of YBa_2Cu_3O_(7-δ) films prepared by the low-fluorine sol-gel process
- Low-temperature deposition of transparent conducting Mn-W co-doped ZnO thin films
- A high-performance enhancement-mode AIGaN/GaN HEMT
- Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth
- Diagram representations of charge pumping processes in CMOS transistors
- Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method
- A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I-V characteristics of a barrier-type thyristor
- Design and application of a depletion-mode NJFET in a high-voltage BiCMOS process
- Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al_(0.3)Ga_(0.7)N/GaN heterostructures
- Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs
- Design and optimization of a monolithic GaInP/GaInAs tandem solar cell
- Chlorine gas sensors using hybrid organic semiconductors of PANI/ZnPcCl_(16)
- A novel closed-form resistance model for trapezoidal interconnects
- A new integrated SOI power device based on self-isolation technology
- 4 GHz bit-stream adder based on ∑△ modulation
- A low power fast-settling frequency-presetting PLL frequency synthesizer
- DCM,FSM,dead time and width controllers for a high frequency high efficiency buck DC-DC converter over a wide load range
- A low jitter,low spur multiphase phase-locked loop for an IR-UWB receiver
- A fully integrated UHF RFID reader SoC for handheld applications in the 0.18 μm CMOS process
- A full on-chip CMOS low-dropout voltage regulator with VCCS compensation
- Design and realization of an ultra-low-power low-phase-noise CMOS LC-VCO
- A self-adaptive full asynchronous bi-directional transmission channel for network-on-chips
- A 0.8 V low power low phase-noise PLL
- An efficient dose-compensation method for proximity effect correction