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Journal of Semiconductors(2010年08期)
半導(dǎo)體學(xué)報(bào)(英文版)

  • 基本信息
  • 半導(dǎo)體學(xué)報(bào)(英文版);半導(dǎo)體學(xué)報(bào);Chinese Journal of Semiconductors

    中國科學(xué)院半導(dǎo)體研究所;中國電子學(xué)會

    月刊

  • 1674-4926

    11-5781/TN

    北京市

    英文;

    大16開

    2-184

    1980

  • 出版信息
  • 信息科技

    無線電電子學(xué)

    9844篇

  • 1044468次

    41844次

  • 評價(jià)信息
  • 1.045

    0.78

  • CA 化學(xué)文摘(美)(2024)

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    JST 日本科學(xué)技術(shù)振興機(jī)構(gòu)數(shù)據(jù)庫(日)(2024)

    EI 工程索引(美)(2024)

    CSCD 中國科學(xué)引文數(shù)據(jù)庫來源期刊(2023-2024年度)

    WJCI 科技期刊世界影響力指數(shù)報(bào)告(2023)來源期刊

    1992年(第一版),1996年(第二版),2000年版,2004年版,2008年版

    中科雙效期刊;中國科技期刊卓越行動(dòng)計(jì)劃入選項(xiàng)目;中國最具國際影響力學(xué)術(shù)期刊;

目 錄

  • First-principles of wurtzite ZnO(0001) and (0001)surface structures
  • Young‘s modulus characterization of low-k films of nanoporous Black Diamond~(TM) by surface acoustic waves
  • Theoretical study of the SiO_2/Si interface and its effect on energy band profile and MOSFET gate tunneling current
  • Theoretical modeling of the interface recombination effect on the performance of Ⅲ-Ⅴtandem solar cells
  • Planar nucleation and crystallization in the annealing process of ion implanted silicon
  • Photoconductive properties of lead iodide films prepared by electron beam evaporation
  • Effect of bath temperature on the properties of CuIn_χGa_(1-χ)Se_2 thin films grown by the electrodeposition technique
  • Growth orientation and superconducting properties of YBa_2Cu_3O_(7-δ) films prepared by the low-fluorine sol-gel process
  • Low-temperature deposition of transparent conducting Mn-W co-doped ZnO thin films
  • A high-performance enhancement-mode AIGaN/GaN HEMT
  • Above 700 V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth
  • Diagram representations of charge pumping processes in CMOS transistors
  • Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method
  • A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I-V characteristics of a barrier-type thyristor
  • Design and application of a depletion-mode NJFET in a high-voltage BiCMOS process
  • Influence of Ni Schottky contact thickness on two-dimensional electron-gas sheet carrier concentration of strained Al_(0.3)Ga_(0.7)N/GaN heterostructures
  • Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs
  • Design and optimization of a monolithic GaInP/GaInAs tandem solar cell
  • Chlorine gas sensors using hybrid organic semiconductors of PANI/ZnPcCl_(16)
  • A novel closed-form resistance model for trapezoidal interconnects
  • A new integrated SOI power device based on self-isolation technology
  • 4 GHz bit-stream adder based on ∑△ modulation
  • A low power fast-settling frequency-presetting PLL frequency synthesizer
  • DCM,FSM,dead time and width controllers for a high frequency high efficiency buck DC-DC converter over a wide load range
  • A low jitter,low spur multiphase phase-locked loop for an IR-UWB receiver
  • A fully integrated UHF RFID reader SoC for handheld applications in the 0.18 μm CMOS process
  • A full on-chip CMOS low-dropout voltage regulator with VCCS compensation
  • Design and realization of an ultra-low-power low-phase-noise CMOS LC-VCO
  • A self-adaptive full asynchronous bi-directional transmission channel for network-on-chips
  • A 0.8 V low power low phase-noise PLL
  • An efficient dose-compensation method for proximity effect correction
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